Title :
Growth of GaAs nanowires using different Au catalysts
Author :
Xu, H.Y. ; Wang, Y. ; Guo, Y.N. ; Zou, J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Mater. Eng., Univ. of Queensland, St. Lucia, QLD, Australia
Abstract :
Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.
Keywords :
III-V semiconductors; annealing; catalysts; epitaxial growth; gallium arsenide; gold; metallic thin films; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; vacuum deposition; Au; GaAs; annealing; catalysts; e-beam evaporation; epitaxial nanowires; lattice defects; nanoparticles; nanowires; thin film; vacuum deposition; Gold;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699766
