Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Author

Paiman, S. ; Gao, Q. ; Joyce, H.J. ; Tan, H.H. ; Jagadish, C. ; Kim, Y. ; Guo, Youguang ; Zou, J.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

37

Lastpage

38

Abstract

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.

Keywords

III-V semiconductors; MOCVD; catalysis; gold; indium compounds; nanowires; photoluminescence; semiconductor growth; spectral line shift; Au-InP; MOCVD; blue-shift; catalysis; emission energy; emission wavelength; metalorganic chemical vapor deposition; microphotoluminescence; optoelectronic devices; temperature 400 degC to 510 degC; wurtzite nanowires; zinc-blende nanowires; Indium phosphide; Integrated optics; Nanowires; Optical films;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699767

Filename

5699767