Title :
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Author :
Paiman, S. ; Gao, Q. ; Joyce, H.J. ; Tan, H.H. ; Jagadish, C. ; Kim, Y. ; Guo, Youguang ; Zou, J.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.
Keywords :
III-V semiconductors; MOCVD; catalysis; gold; indium compounds; nanowires; photoluminescence; semiconductor growth; spectral line shift; Au-InP; MOCVD; blue-shift; catalysis; emission energy; emission wavelength; metalorganic chemical vapor deposition; microphotoluminescence; optoelectronic devices; temperature 400 degC to 510 degC; wurtzite nanowires; zinc-blende nanowires; Indium phosphide; Integrated optics; Nanowires; Optical films;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699767
