DocumentCode :
2315887
Title :
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Author :
Hall, C.R. ; Dao, Lv ; Koike, K. ; Sasa, S. ; Tan, H.H. ; Inoue, M. ; Yano, M. ; Jagadish, C. ; Davis, J.A.
Author_Institution :
Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Hawthorn, VIC, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
45
Lastpage :
46
Abstract :
We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.
Keywords :
II-VI semiconductors; excited states; quantum confined Stark effect; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; ZnO-ZnMgO; carrier-induced screening; excited state lifetimes; internal electric field; quantum confined Stark effect; quantum wells; Delay; Legged locomotion; Photonics; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699771
Filename :
5699771
Link To Document :
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