Title :
Optical and THz characterization of p-In0.64Al0.36Sb for antenna application
Author :
Jeong, Hoonill ; Jeong, Jihoon ; Hong, Youngbin ; Jho, Young-Dahl ; Shin, S.H. ; Kim, S.Y. ; Lee, J.I. ; Song, Jin-Dong
Author_Institution :
Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Time-resolved photoreflectance was performed simultaneously with THz radiation measurements in a series of p-doped InAl0.36Sb. Carrier decay time can be as short as 350 fs depending on the doping density, which showed correlation with THz emission features.
Keywords :
indium compounds; photoconducting materials; photoreflectance; semiconductor device measurement; semiconductor doping; semiconductor growth; time resolved spectroscopy; In0.64Al0.36Sb; THz characterization; THz radiation measurements; antenna application; time-resolved photoreflectance; Antenna measurements; Doping; Electron mobility; Electron optics; FETs; Gallium arsenide; Integrated optics; Optical materials; Principal component analysis; Time measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324683
