DocumentCode :
2315919
Title :
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Author :
McKerracher, I. ; Wong-Leung, J. ; Jolley, G. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
49
Lastpage :
50
Abstract :
Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurity-free vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot infrared photodetectors; encapsulants; impurity-free vacancy disordering; multicolour quantum dot infrared photodetectors; optoelectronic devices; post-growth approach; quantum dot intermixing; selective-area intermixing; silica capping layers; spectral tuning; titania caps; Annealing; Gallium arsenide; Nickel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699773
Filename :
5699773
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315919
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