Title :
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Author :
Guo, Y.N. ; Zou, J. ; Joyce, H.J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Mater. Eng. & Centre for Microscopy & Microanalysis, Univ. of Queensland, St. Lucia, QLD, Australia
Abstract :
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
Keywords :
III-V semiconductors; MOCVD; annealing; gallium arsenide; high-temperature effects; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; GaAs; MOCVD; high temperature post-annealing; nanowires; sidewall facets; temperature 450 degC; temperature 650 degC; time 30 min; {112} facets;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699774
