DocumentCode
2315945
Title
Comparative study on THz radiation from various semiconductors
Author
Hong, Youngbin ; Jeong, Jihoon ; Jeong, Hoonil ; Jho, Young-Dahl ; Song, J.D. ; Shin, S.H. ; Kim, S.Y.
Author_Institution
Dep. of Info. & Comm., Gwangju Inst. of Sci.&Tech., Gwangju, South Korea
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
We have measured THz radiation from various semiconductor groups: InGaSb, GaAsSb, InAsSb, InAlSb, InSb, InAs, and InGaAs. The InAs series was the most intense radiation source whereas GaAsSb was the weakest one. In terms of the emission time, InGaAs (GaAsSb) was the fastest (slowest) material.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor devices; terahertz wave devices; terahertz wave generation; GaAsSb; InAlSb; InAs; InAs series; InAsSb; InGaAs; InGaSb; InSb; THz radiation; emission time; intense radiation source; semiconductors; Frequency; Indium gallium arsenide; Optical materials; Optical pulses; Phonons; Plasmons; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Underwater acoustics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5324685
Filename
5324685
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