Title :
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Author :
Kang, Jung-Hyun ; Gao, Qiang ; Joyce, Hannah J. ; Kim, Yong ; Guo, Yanan ; Xu, Hongyi ; Zou, Jin ; Fickenscher, Melodie A. ; Smith, Leigh M. ; Jackson, Howard E. ; Yarrison-Rice, J.M. ; Tan, Hark Hoe ; Jagadish, Chennupati
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
Keywords :
buffer layers; crystal structure; gallium arsenide; nanofabrication; nanowires; semiconductor quantum wires; GaAs-GaP; Si (111) substrates; Si surface; crystal structure; electron volt energy 260 meV; emission energy; optical characterization; shell thickness; size 25 nm; strained GaAs-GaP core-shell nanowires; structural characterization; thin GaAs buffer layer; two-temperature growth; unstrained GaAs nanowires; vertical GaAs-GaP core-shell nanowires; Buffer layers; Gallium arsenide; Nanowires; Silicon; Strain; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699778
