Title :
Design of GaN-based light-emitting diodes with enhanced lateral light extraction
Author :
Kim, Hyunsoo ; Kim, Seongjun ; Park, Youngjun
Author_Institution :
Sch. of Semicond. & Chem. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell´s law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; ray tracing; GaN; LEDs; enhanced lateral light extraction; light emitting diode; mesa hole; ray tracing; Artificial neural networks; IEEE Lasers and Electro-Optics Society;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699780
