Mid-infrared InAsSb quantum dots with high emission efficiency

Author

Lei, W. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

65

Lastpage

66

Abstract

Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 μm was obtained for the sample with In_0.53Ga_0.47As_0.25Sb_0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; multilayers; photoluminescence; semiconductor quantum dots; In_0.53Ga_0.47As_0.25Sb_0.75; In_0.53Ga_0.47As_0.25Sb_0.75 layers; InGaAsSb sandwich layers; InP; InP carrier blocking layers; emission efficiency; emission signal; lattice mismatch; mid-infrared InAsSb quantum dots; quantum confinement reduction; thermal escape suppression; wavelength 2.1 mum; Gallium; Indium gallium arsenide; Indium phosphide; Inductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699782

Filename

5699782