Title :
Characterisation and device applications of ZnxMg1−xO films grown by pulsed laser deposition
Author :
Partridge, J.G. ; Kim, D. ; Heinhold, R. ; Field, M.R. ; Durbin, S.M. ; Reeves, RJ ; Allen, M.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Canterbury, Christchurch, New Zealand
Abstract :
ZnxMg1-xO films have been deposited using pulsed laser deposition (PLD) onto a-plane sapphire substrates and incorporated into ultraviolet sensors based on IrO/ZnxMg1-xO Schottky barrier contacts. Electron diffraction showed that the films were highly crystalline with low surface roughness. Atomic force micros-copy showed this roughness to be <;2% of the film thickness. The IrOx/ZnxMg1-xO Schottky devices exhibited good rectification (barrier heights ~0.88 eV and ideality factors ~1.7) and UV sensing capability.
Keywords :
II-VI semiconductors; Schottky barriers; atomic force microscopy; electron diffraction; photodetectors; pulsed laser deposition; rectification; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; zinc compounds; Schottky barrier contacts; Schottky devices; UV sensing capability; ZnxMg1-xO; a-plane sapphire substrates; atomic force microscopy; barrier heights; device applications; electron diffraction; film thickness; highly crystalline films; ideality factors; low surface roughness; pulsed laser deposition; rectification; ultraviolet sensors; Pulsed laser deposition; X-ray lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699790
