Characterisation and device applications of ZnxMg1−xO films grown by pulsed laser deposition

Author

Partridge, J.G. ; Kim, D. ; Heinhold, R. ; Field, M.R. ; Durbin, S.M. ; Reeves, RJ ; Allen, M.W.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Canterbury, Christchurch, New Zealand

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

79

Lastpage

80

Abstract

Zn_xMg_1-xO films have been deposited using pulsed laser deposition (PLD) onto a-plane sapphire substrates and incorporated into ultraviolet sensors based on IrO/Zn_xMg_1-xO Schottky barrier contacts. Electron diffraction showed that the films were highly crystalline with low surface roughness. Atomic force micros-copy showed this roughness to be <;2% of the film thickness. The IrO_x/Zn_xMg_1-xO Schottky devices exhibited good rectification (barrier heights ~0.88 eV and ideality factors ~1.7) and UV sensing capability.

Keywords

II-VI semiconductors; Schottky barriers; atomic force microscopy; electron diffraction; photodetectors; pulsed laser deposition; rectification; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; zinc compounds; Schottky barrier contacts; Schottky devices; UV sensing capability; Zn_xMg_1-xO; a-plane sapphire substrates; atomic force microscopy; barrier heights; device applications; electron diffraction; film thickness; highly crystalline films; ideality factors; low surface roughness; pulsed laser deposition; rectification; ultraviolet sensors; Pulsed laser deposition; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699790

Filename

5699790