DocumentCode
2316227
Title
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Author
Ramesh, V. ; Gao, Q. ; Tan, H.H. ; Paiman, S. ; Guo, Y.N. ; Zou, J. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
83
Lastpage
84
Abstract
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; transmission electron microscopy; InP-InGaAs; coreshell nanowire heterostructures; metal organic chemical vapour deposition; scanning electron microscopy; transmission electron microscopy; Indium gallium arsenide; Indium phosphide; Metals; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699792
Filename
5699792
Link To Document