Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

Author

Wang, H. ; Yuan, J. ; van Veldhoven, P.J. ; De Vries, P. Nouwens T ; Smalbrugge, E. ; Geluk, E.J. ; Nötzel, R.

Author_Institution

Dept. of Appl. Phys., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

93

Lastpage

94

Abstract

We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640°C during regrowth.

Keywords

III-V semiconductors; MOCVD; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; surface morphology; vapour phase epitaxial growth; InAs-InP; InP pyramids; growth parameter optimization; metalorganic vapor-phase epitaxy; planar InP structures; regrowth epitaxy; shrinking pyramid size; single quantum dot; site-controlled InAs-InP quantum dots; smooth surface morphology; temperature 640 degC; wavelength 1.55 mum;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699798

Filename

5699798