DocumentCode
2316449
Title
Cavity less GaAs CW sub-THz TUNNETT oscillators
Author
Sundararajan, B. ; Endo, Kazuomi ; Tanabe, Tadao ; Oyama, Yutaka ; Plotka, Piotr ; Nishizawa, Jun-ichi
Author_Institution
Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200 GHz and 300 GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177- 235 GHz at room temperature with bias current of 300-550 mA (duty 5 %).
Keywords
microstrip antennas; transit time devices; tunnel diode oscillators; CW sub-THz TUNNETT oscillators; GaAs; current 300 mA to 550 mA; frequency 177 GHz to 235 GHz; frequency 200 GHz; frequency 300 GHz; molecular layer epitaxy; oscillation frequency; planar patch antennas; temperature 293 K to 298 K; tunnel injection transit time diodes; Diodes; Epitaxial growth; Frequency; Gallium arsenide; Maximum likelihood estimation; Oscillators; Patch antennas; Planar arrays; Polarization; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5324720
Filename
5324720
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