DocumentCode
2316575
Title
Lasing characteristics of optical thyristor for optical logic function
Author
Kim, D. ; Lee, H. ; Choi, W. ; Choi, Y. ; Lee, S. ; Woo, D. ; Byun, Y. ; Kim, J. ; Kim, S. ; Nakano, Y.
Author_Institution
Chungang Univ., Seoul, South Korea
fYear
2003
fDate
23-28 March 2003
Firstpage
80
Abstract
We present the first demonstration of the waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure. The lasing threshold current at the temperature of 25°C and 10°C are 111 mA and 72.5 mA, respectively.
Keywords
III-V semiconductors; OBIC; gallium arsenide; indium compounds; optical logic; photothyristors; quantum well lasers; waveguide lasers; 10 degC; 111 mA; 25 degC; 72.5 mA; InGaAs-InGaAsP; MQW structure; lasing characteristics; lasing threshold current; optical logic function; waveguide-type depleted optical thyristor laser diode; Electrons; Fiber nonlinear optics; Logic functions; Nonlinear optics; Optical modulation; Optical pumping; Pulse modulation; Reflectivity; Resonance; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN
1-55752-746-6
Type
conf
DOI
10.1109/OFC.2003.1247504
Filename
1247504
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