Title :
Lasing characteristics of optical thyristor for optical logic function
Author :
Kim, D. ; Lee, H. ; Choi, W. ; Choi, Y. ; Lee, S. ; Woo, D. ; Byun, Y. ; Kim, J. ; Kim, S. ; Nakano, Y.
Author_Institution :
Chungang Univ., Seoul, South Korea
Abstract :
We present the first demonstration of the waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure. The lasing threshold current at the temperature of 25°C and 10°C are 111 mA and 72.5 mA, respectively.
Keywords :
III-V semiconductors; OBIC; gallium arsenide; indium compounds; optical logic; photothyristors; quantum well lasers; waveguide lasers; 10 degC; 111 mA; 25 degC; 72.5 mA; InGaAs-InGaAsP; MQW structure; lasing characteristics; lasing threshold current; optical logic function; waveguide-type depleted optical thyristor laser diode; Electrons; Fiber nonlinear optics; Logic functions; Nonlinear optics; Optical modulation; Optical pumping; Pulse modulation; Reflectivity; Resonance; Thyristors;
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
DOI :
10.1109/OFC.2003.1247504
