DocumentCode
2316714
Title
Analysis of a substrate leakage current at MMIC
Author
Park, Joontae ; Kim, Kihyun ; Cho, Eunil ; Nam, Sangwook
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
This paper describes characteristics of a substrate leakage current flowing to the substrate in millimeter wave CMOS IC. The effects of the substrate current are investigated according to operating modes of a power amplifier (PA) - class-A and class-B. Due to the characteristics of V and I at the drain, better performance could be expected in the operation of class-B.
Keywords
CMOS integrated circuits; MIMIC; leakage currents; power amplifiers; MMIC; V-I characteristics; class-A power amplifier; class-B power amplifier; drain characteristics; millimeter wave CMOS IC; substrate leakage current; Avalanche breakdown; Breakdown voltage; CMOS process; Conductivity; Electric breakdown; Impedance; Leakage current; MMICs; Power generation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5324736
Filename
5324736
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