Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas

Author

Shiraishi, M. ; Suzuki, S. ; Teranishi, A. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.

Author_Institution

Tokyo Inst. of Technol., Tokyo, Japan

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum²) and a low available current density (ap3 mA/mum²) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; resonant tunnelling diodes; slot antennas; InGaAs-AlAs; current density; mesa area; oscillation frequency; parasitic capacitance; planar slot antennas; resonant tunneling diodes; temperature 293 K to 298 K; Current density; Diodes; Doping; Frequency; Indium gallium arsenide; Oscillators; Power generation; Resonant tunneling devices; Slot antennas; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324766

Filename

5324766