Title :
Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas
Author :
Shiraishi, M. ; Suzuki, S. ; Teranishi, A. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.
Author_Institution :
Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; resonant tunnelling diodes; slot antennas; InGaAs-AlAs; current density; mesa area; oscillation frequency; parasitic capacitance; planar slot antennas; resonant tunneling diodes; temperature 293 K to 298 K; Current density; Diodes; Doping; Frequency; Indium gallium arsenide; Oscillators; Power generation; Resonant tunneling devices; Slot antennas; Temperature;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324766
