A latch-up like new failure mechanism for high density cmos dynamic RAM´s - hysteresis in operating Vcc range

Author

Furuyama, T. ; Ishiuchi, H. ; Tanaka, H. ; Watanabe, Y. ; Kohyama, Y. ; Kiroura ; Muraoka, K. ; Sugiura, S. ; Natori, K.

Author_Institution

Toshiba Corporation

fYear

1989

fDate

25-27 May 1989

Firstpage

Lastpage

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1989. Digest of Technical Papers., 1989 Symposium on

Conference_Location

Kyoto, Japan

Type

DOI

10.1109/VLSIC.1989.1037475

Filename

1037475

Link To Document