Title :
Spectral properties of CVD diamond and high-purity semi-insulating SiC
Author :
Polyakov, V.I. ; Garin, B.M. ; Rukovishnikov, A.I. ; Avdeeva, L.A. ; Dutta, J.M. ; Varnin, V.P.
Author_Institution :
Inst. of Radio Eng. & Electron., RAS, Moscow, Russia
Abstract :
CVD diamond and HPSI SiC, which are among the most promising low dielectric loss materials for mm and sub-mm electromagnetic waves, were studied by charge-based deep level transient spectroscopy. The activation energy, capture cross-section, and concentration of the levels, which are induced by defects of the different nature, were obtained. Experimental results and their implication to loss properties are discussed.
Keywords :
chemical vapour deposition; deep level transient spectroscopy; diamond; dielectric losses; dielectric materials; dielectric thin films; microwave materials; silicon compounds; submillimetre waves; wide band gap semiconductors; C; CVD diamond film; SiC; capture cross-section; charge-based deep level transient spectroscopy; dielectric loss materials; high-purity semi-insulating material; millimetre electromagnetic waves; spectral properties; submillimetre electromagnetic waves; Capacitance measurement; Charge measurement; Current measurement; Dielectric loss measurement; Insulation; Plasma measurements; Q measurement; Semiconductor materials; Silicon carbide; Spectroscopy;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324784
