An expermental 16Mb DRAM with reduced peak-current noise

Author

Chin, Daeje ; Kim, Changhyun ; Choi, Hoon ; Min, Dong S. ; Hwang, Hong S. ; Hoont Choi ; Cho, Soo I. ; Chung, Tae Y. ; Park, Chan J. ; Shin, Yoon S. ; Suh, Kwangpyuk ; Park, Yong E.

Author_Institution

Samsung Electronics Co., Ltd.

fYear

1989

fDate

25-27 May 1989

Firstpage

113

Lastpage

114

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1989. Digest of Technical Papers., 1989 Symposium on

Conference_Location

Kyoto, Japan

Type

DOI

10.1109/VLSIC.1989.1037515

Filename

1037515

Link To Document