DocumentCode :
2317979
Title :
Investigation of gated field emission array of high resistance tips for improving brightness uniformity of FED
Author :
Chubun, N.
Author_Institution :
SRPC Istok Fryazino, Russia
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
36
Lastpage :
37
Abstract :
The well known idea to achieve surface uniformity of FED brightness by the way of including of megaohmic resistor in electric circuit of each tip require of special process of high resistive layer deposition and additional lithography procedure. Also, it is known FED development program which try to circumvent these difficulties by the way of complicated driver circuits instead of resistive layer. In this work in order to simplify the technology we have investigated possibility to manufacture field emission array cathodes with high resistive material of emission tips and have tested its emission properties and level of brightness uniformity within real FEDs.
Keywords :
brightness; cathodes; electron field emission; field emission displays; vacuum microelectronics; FED brightness; cathode manufacture; gated field emission array; surface uniformity; tip resistance; Brightness; Cathodes; Circuit testing; Driver circuits; Electric resistance; Lithography; Manufacturing; Materials testing; Resistors; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728626
Filename :
728626
Link To Document :
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