Implementation of FED with MOSFET-controlled FEA

The MCFEA (MOSFET-controlled FEA) for an FED application has some advantages: a uniform emission current can be obtained because the current/voltage characteristics are linear functions of geometrical parameters while those of the FEA are exponential functions of geometrical parameters and a low voltage driver circuit is applicable because it is easy to fabricate MOSFETs which can drive the current at low voltage. The latter is very important when FED is applied to a small-area high resolution display because FED will have so many connection pins to outer driver circuit and this will make it difficult to use external driver in this application. So driver circuit must be integrated on the same substrate. Since driver circuit operates at below 10V, this circuit cannot drive general FEA. To integrate driver circuit in the same substrate, therefore, a MOSFET named high voltage MOSFET (HV-MOSFET) which can endure high voltage of FEA gate must be developed. And this MOSFET should be small enough not to affect the resolution of display.