DocumentCode :
2318235
Title :
Terahertz/optical properties of semiconductor quantum wells
Author :
Citrin, D.S. ; Maslov, A.V.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2002
fDate :
2002
Firstpage :
45
Lastpage :
47
Abstract :
The modulation of the optical properties of semiconductor quantum wells at THz frequencies is explored theoretically. The modulation occurs via coherent optical/THz mixing since the modulation frequency can well exceed the optical dephasing rate.
Keywords :
finite difference time-domain analysis; gallium arsenide; infrared spectra; nonlinear optics; optical modulation; quantum well devices; semiconductor quantum wells; GaAs; coherent optical/terahertz mixing; far-infrared response; low-dimensional semiconductor structures; modulation frequency; nonlinear optics; optical absorption; optical dephasing rate; optical modulation; semiconductor quantum wells; terahertz technology; Absorption; Equations; Frequency; Nonlinear optical devices; Nonlinear optics; Optical mixing; Optical modulation; Optical polarization; Quantum mechanics; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
Type :
conf
DOI :
10.1109/THZ.2002.1037585
Filename :
1037585
Link To Document :
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