Title :
Study on the interfacial properties at the OTS treated SiO2 film
Author :
Oh, Teresa ; Wook Kim, Jong
Author_Institution :
Cheongju Univ., Cheongju
Abstract :
n-octadecyltrichlorosilane treated the SiO2 film was prepared by the mixed solution of chloroform and hexane. The leakage current decreased by the treatment of organic diluted solutions, but the leakage current of samples with various ratios was in proportion to increase the content of n-octadecyltrichlorosilane. The FTIR spectra of SiO2 film showed the various wave forms below 800 cm-1, and the FTIR spectra of 720 and 745 cm-1 did not disappear after organic treatment. The FTIR spectra below 800 cm-1 became weak according to the increase of the content of of n-octadecyltrichlorosilane. The FTIR spectra below 800 cm-1 between samples 6 and 7 varied abruptly and the sample 6 showed the lowest leakage current.
Keywords :
dielectric thin films; leakage currents; organic compounds; silicon compounds; FTIR spectra; OTS; SiO2; chloroform; hexane; interfacial property; leakage current; n-octadecyltrichlorosilane; oil starvation; organic diluted solutions; thermal failure; Aluminum; Fourier transforms; Industrial training; Infrared spectra; Leakage current; Organic thin film transistors; Semiconductor films; Spectroscopy; Substrates; Surface treatment; Oil starvation; Thermal Failure; Transformer;
Conference_Titel :
Condition Monitoring and Diagnosis, 2008. CMD 2008. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1621-9
Electronic_ISBN :
978-1-4244-1622-6
DOI :
10.1109/CMD.2008.4580280
