Investigation of luminescent properties of low voltage phosphors for the FED applications

Author

Jang, J.E. ; Jin, Y.W. ; Jung, J.E. ; You, Y.C. ; Park, H.S. ; Yi, W.K. ; Kim, J.M.

Author_Institution

Mater. & Device Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

71

Lastpage

72

Abstract

Low voltage phosphors for the application to field emission display devices were deposited on indium tin oxide glasses by utilizing an electrophoretic method. The thickness of the phosphor screen was carefully varied in order to get the highest brightness. The excitation and measurement of the phosphor screen were performed by two different methods in this experiment; a field emitter array and a commercial electron gun. Our results showed that 1.5-2 layer of phosphor screen has optimal brightness under our experimental conditions. The above results have the same trend for two types of excitation sources of the phosphor.

Keywords

brightness; electrophoretic coatings; field emission displays; luminescence; phosphors; FEA; FED applications; ITO; ITO glasses; InSnO; LV phosphors; commercial electron gun; electrophoretic method; field emitter array; low voltage phosphors; luminescent properties; optimal brightness; phosphor screen thickness; Anodes; Brightness; Electron emission; Electron optics; Electron sources; Field emitter arrays; Flat panel displays; Low voltage; Phosphors; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728644

Filename

728644