DocumentCode :
2318328
Title :
Investigation of luminescent properties of low voltage phosphors for the FED applications
Author :
Jang, J.E. ; Jin, Y.W. ; Jung, J.E. ; You, Y.C. ; Park, H.S. ; Yi, W.K. ; Kim, J.M.
Author_Institution :
Mater. & Device Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
71
Lastpage :
72
Abstract :
Low voltage phosphors for the application to field emission display devices were deposited on indium tin oxide glasses by utilizing an electrophoretic method. The thickness of the phosphor screen was carefully varied in order to get the highest brightness. The excitation and measurement of the phosphor screen were performed by two different methods in this experiment; a field emitter array and a commercial electron gun. Our results showed that 1.5-2 layer of phosphor screen has optimal brightness under our experimental conditions. The above results have the same trend for two types of excitation sources of the phosphor.
Keywords :
brightness; electrophoretic coatings; field emission displays; luminescence; phosphors; FEA; FED applications; ITO; ITO glasses; InSnO; LV phosphors; commercial electron gun; electrophoretic method; field emitter array; low voltage phosphors; luminescent properties; optimal brightness; phosphor screen thickness; Anodes; Brightness; Electron emission; Electron optics; Electron sources; Field emitter arrays; Flat panel displays; Low voltage; Phosphors; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728644
Filename :
728644
Link To Document :
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