• DocumentCode
    2318361
  • Title

    Representing bias-network baseband characteristics when simulating intermodulation distortion

  • Author

    Olsen, C. Michael ; Sweeney, Susan L. ; Remley, Kate A.

  • Author_Institution
    Microelectron. Div., IBM, Hopewell Junction, NY, USA
  • fYear
    2010
  • fDate
    Nov. 30 2010-Dec. 3 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We assess the expected impact that incorrect representation of the bias network will have on simulations of intermodulation distortion by quantifying the range of impedance values of several real baseband components, including bias tees, cables, and bias supply settings. We then introduce a table-based method to incorporate these elements in circuit simulations and verify its ability to improve prediction of intermodulation distortion. With this method, we are able to predict the third-order intermodulation distortion products to within 0.25 dB in the weakly nonlinear regime for a variety of baseband components. Use of the method enables improved model parameter extraction because only the device model itself remains in question if simulation and measurement results differ.
  • Keywords
    intermodulation distortion; bias network baseband characteristics; bias supply setting; bias tees; cables; circuit simulation; impedance values; intermodulation distortion; parameter extraction; Bias-tee; circuit simulation; intermodulation distortion; memory effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Measurement Symposium (ARFTG), 2010 76th ARFTG
  • Conference_Location
    Clearwater Beach, FL
  • Print_ISBN
    978-1-4244-7447-9
  • Type

    conf

  • DOI
    10.1109/ARFTG76.2010.5700049
  • Filename
    5700049