DocumentCode
2318361
Title
Representing bias-network baseband characteristics when simulating intermodulation distortion
Author
Olsen, C. Michael ; Sweeney, Susan L. ; Remley, Kate A.
Author_Institution
Microelectron. Div., IBM, Hopewell Junction, NY, USA
fYear
2010
fDate
Nov. 30 2010-Dec. 3 2010
Firstpage
1
Lastpage
6
Abstract
We assess the expected impact that incorrect representation of the bias network will have on simulations of intermodulation distortion by quantifying the range of impedance values of several real baseband components, including bias tees, cables, and bias supply settings. We then introduce a table-based method to incorporate these elements in circuit simulations and verify its ability to improve prediction of intermodulation distortion. With this method, we are able to predict the third-order intermodulation distortion products to within 0.25 dB in the weakly nonlinear regime for a variety of baseband components. Use of the method enables improved model parameter extraction because only the device model itself remains in question if simulation and measurement results differ.
Keywords
intermodulation distortion; bias network baseband characteristics; bias supply setting; bias tees; cables; circuit simulation; impedance values; intermodulation distortion; parameter extraction; Bias-tee; circuit simulation; intermodulation distortion; memory effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Measurement Symposium (ARFTG), 2010 76th ARFTG
Conference_Location
Clearwater Beach, FL
Print_ISBN
978-1-4244-7447-9
Type
conf
DOI
10.1109/ARFTG76.2010.5700049
Filename
5700049
Link To Document