Title :
Optically pumped terahertz silicon lasers
Author :
Pavlov, Serguei G. ; Hübers, Heinz-Wilhelm ; Zhukavin, Roman Kh ; Orlova, Ekaterina E. ; Riemann, Helge ; Shastin, Valery N.
Author_Institution :
Inst. of Space Sensor Technol. & Planetary Exploration, German Aerosp. Center, Berlin, Germany
Abstract :
Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.
Keywords :
antimony; bismuth; electron-phonon interactions; elemental semiconductors; excited states; impurity states; low-temperature techniques; optical pumping; phosphorus; population inversion; semiconductor lasers; silicon; stimulated emission; submillimetre wave lasers; 10 K; Si:Bi; Si:Bi lasers; Si:P; Si:P lasers; Si:Sb; Si:Sb lasers; electron-phonon interaction; intra-center optical transitions; long-living excited impurity state; low temperature photoexcitation; optically pumped terahertz silicon lasers; population inversion mechanisms; semiconductor lasers; silicon shallow impurity centers; stimulated emission; unpopulated impurity states; Laser excitation; Laser transitions; Optical pumping; Optical sensors; Pump lasers; Quantum cascade lasers; Semiconductor impurities; Semiconductor lasers; Silicon; Stimulated emission;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037599
