Title :
GaAs edge field emitter arrays fabrication by wet and dry etching
Author :
Kropfeld, P. ; Ducroquet, F. ; Yaradou, O. ; Vanoverschelde, A.
Author_Institution :
Lille I Univ., Villeneuve d´´Ascq, France
Abstract :
Wedge and wall structures were fabricated by wet and dry etching processes. Various emitter shapes were obtained and discussed in terms of emission and integration capabilities.
Keywords :
III-V semiconductors; electron field emission; etching; gallium arsenide; vacuum microelectronics; GaAs; GaAs edge field emitter array; dry etching; fabrication; wet etching; Dry etching; Erbium; Fabrication; Field emitter arrays; Gallium arsenide; High power amplifiers; Optical control; Plasma measurements; Shape; Wet etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728653
