Title :
Fabrication and characteristics of emitter-sharpened double-gate race-track-shaped field emitter structure
Author :
Baoping Wang ; Huang, Zhongping ; Sin, Johnny K O ; Tang, Yongming ; Wang, Chen ; Xue, Kunxing
Author_Institution :
Dept. of Electron. Eng., Southeast Univ., Nanjing, China
Abstract :
Experimental characteristics of the double-gate race-track-shaped field emitter structure are demonstrated for the first time. To minimize the gate current, a novel double-gate emitter-sharpened structure is presented. This structure has low turn-on voltage and low gate current. It is very suitable for practical applications.
Keywords :
electron field emission; vacuum microelectronics; double-gate race-track-shaped field emitter; emitter-sharpened structure; low gate current; low turn-on voltage; Anodes; Costs; Current density; Etching; Fabrication; Gold; Low voltage; Power system modeling; Silicon; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728656
