Measurements of emitter resistance in Si FEA

Author

Zhirnov, V.V. ; Givargizov, E.I. ; Seleznev, B.V. ; Kandidov, A.V. ; Blyablin, A.V. ; Suetin, N.V. ; Mankelevich, J.A.

Author_Institution

Inst. of Crystallogr., Moscow, Russia

fYear

1998

fDate

19-24 July 1998

Firstpage

105

Lastpage

106

Abstract

Resistance of field emission tips can play an important role in the field emission cathode operation, in particular for stable and uniform emission from field emission arrays (FEA). The development of a non-destructive technique for direct measurements of resistance of the silicon field emission tips is also important for some interdisciplinary problems. However, until now, there are no reliable technique for control and measurements of the resistivity of tiny VLS whiskers. In this paper a technique for determination of the resistance of field emitters is presented.

Keywords

electric resistance measurement; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; Si FEA; VLS whisker; cold cathode; field emission array; field emitter; nondestructive technique; resistance measurement; tip; Cathodes; Conductivity; Crystallography; Electrical resistance measurement; Electron emission; Field emitter arrays; Geometry; Silicon; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728663

Filename

728663