Title :
Measurements of emitter resistance in Si FEA
Author :
Zhirnov, V.V. ; Givargizov, E.I. ; Seleznev, B.V. ; Kandidov, A.V. ; Blyablin, A.V. ; Suetin, N.V. ; Mankelevich, J.A.
Author_Institution :
Inst. of Crystallogr., Moscow, Russia
Abstract :
Resistance of field emission tips can play an important role in the field emission cathode operation, in particular for stable and uniform emission from field emission arrays (FEA). The development of a non-destructive technique for direct measurements of resistance of the silicon field emission tips is also important for some interdisciplinary problems. However, until now, there are no reliable technique for control and measurements of the resistivity of tiny VLS whiskers. In this paper a technique for determination of the resistance of field emitters is presented.
Keywords :
electric resistance measurement; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; Si FEA; VLS whisker; cold cathode; field emission array; field emitter; nondestructive technique; resistance measurement; tip; Cathodes; Conductivity; Crystallography; Electrical resistance measurement; Electron emission; Field emitter arrays; Geometry; Silicon; Temperature dependence; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728663
