Title :
Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport
Author :
Eckardt, M. ; Schwanhausser, A. ; Renner, F. ; Robledo, L. ; Friedrich, A. ; Pohl, P. ; Kiesel, P. ; Malzer, S. ; Döhler, G.H. ; Driscoll, D. ; Hanson, M. ; Gossard, A.C.
Author_Institution :
Inst. fur Tech. Phys., Erlangen-Nurnberg Univ., Erlangen, Germany
Abstract :
Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching to the attached antenna.
Keywords :
III-V semiconductors; ballistic transport; gallium arsenide; impedance matching; microwave photonics; photoconducting devices; semiconductor superlattices; submillimetre wave generation; GaAs; impedance matching; low-temperature-grown semiconductor; p-i-n-p-i-n-superlattice; periodically doped heterostructures; quasi ballistic transport; terahertz photomixer; Ballistic transport; Charge carrier lifetime; Charge carrier processes; Electron mobility; Frequency; Gallium arsenide; Impedance matching; Power lasers; Space charge; Spontaneous emission;
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
DOI :
10.1109/THZ.2002.1037615
