Simulated I-V characteristics of the race-track-shaped field emitter structures with small spacing between the emitter and the gate

Author

Tang, Yongming ; Wang, Chen ; Wang, Baoping ; Xue, Kunxing ; Tong, Linsu

Author_Institution

Dept. of Electron. Eng., Southeast Univ., Nanjing, China

fYear

1998

fDate

19-24 July 1998

Firstpage

111

Lastpage

112

Abstract

In this paper, the race-track-shaped field emitter structures with small spacing between the emitter and the gate are proposed. The iterative finite difference in the coarse and fine meshing areas and the fourth order Runge-Kutta method are used to calculate the electric field and the electron trajectories in the race-track-shaped field emitter structures. Numerical results show that the turn-on voltages of these structures with 0.25 /spl mu/m and 0.1 /spl mu/m spacing between the emitter and the gate are 100 V and 60 V respectively.

Keywords

Runge-Kutta methods; electron field emission; finite difference methods; iterative methods; vacuum microelectronics; 0.1 micron; 0.25 micron; 100 V; 60 V; FEA; I-V characteristics; Runge-Kutta method; electric field; electron trajectory; iterative finite difference method; numerical simulation; race-track-shaped field emitter structure; turn-on voltage; Boundary conditions; Costs; Electron emission; Finite difference methods; Interpolation; Iterative methods; Low voltage; Shape; Structural engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728666

Filename

728666