Title :
Surface morphology and I-V characteristics of single crystal, polycrystalline and amorphous silicon FEAs
Author :
Lee, Jong Duk ; Shim, Byung Chang ; Oh, Chang Woo ; Kim, Il Hwan ; Uh, Hyung Soo
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea
Abstract :
c-Si, poly-Si and a-Si field emitter arrays (FEAs) were successfully fabricated. The a-Si FEAs show improved electrical characteristics which come from smaller surface roughness and better defined gate apertures in comparison with poly-Si FEAs. It is expected that a-Si FEAs can give high reliability, uniformity and electrical stability in large area and high resolution display applications.
Keywords :
amorphous semiconductors; electron field emission; elemental semiconductors; silicon; surface topography; vacuum microelectronics; I-V characteristics; Si; amorphous silicon; electrical stability; fabrication; field emitter array; gate aperture; polycrystalline silicon; single crystal silicon; surface morphology; surface roughness; Amorphous silicon; Apertures; Crystallization; Doping; Electrodes; Oxidation; Rough surfaces; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728669
