Title :
Electrical characterization of porous silicon field emitter arrays
Author :
Kim, Hong Ryong ; Jessing, J.R. ; Parker, D.L.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
We studied the electrical characteristics of porous silicon field emitter arrays (PSFEAs). The surface of silicon field emitters have been modified by electrochemical etching with HF:ethanol solution. Porous silicon consists of a high density of submicroscopic fibrils which serve as increased emission sites per tip, hence significantly improving the emission characteristics. PSFEAs exhibited low turn-on voltage and larger emission current with less current fluctuation and good reproducibility.
Keywords :
electron field emission; elemental semiconductors; etching; porous semiconductors; silicon; vacuum microelectronics; Si; current fluctuation; electrical characteristics; electrochemical etching; emission current; porous silicon field emitter array; reproducibility; surface modification; turn-on voltage; Current density; Etching; Field emitter arrays; Fluctuations; Hafnium; Low voltage; Oxidation; Probes; Silicon; Testing;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728672
