Low voltage operation from Tower structure MOSFET Si field emitter

Silicon field emitter arrays are expected to be a key technology for realizing high performance FED in the next generation. The most important factors of FED for practical application, such as PDAs, are extremely low power consumption besides the emission stability. Recently, it has been reported that an active device utilizing MOSFET can control the emission current. However, the emission property including device reliability has not been studied in detail. This paper is a first report on the device reliability analysis concerned with a hot electron effect, and on the optimization of MOSFET structure.