Title :
Si-gate Transfer Mold FEAs for a study of the possibility of high-voltage switching
Author :
Sakai, Tadashi ; Ono, Tomio ; Sakuma, Naoshi ; Nakayama, Kazuya ; Ohashi, Hiromichi
Author_Institution :
Komukai Toshiba, Kawasaki, Japan
Abstract :
In this work, Si-gate Transfer Mold FEAs have been fabricated and tested to demonstrate the possibility of applying vacuum microelectronics devices for high-voltage switching. As a result, high voltage of up to 2 kV have been turned on and off using the FEAs.
Keywords :
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; vacuum switches; 2 kV; Si; Si-gate Transfer Mold FEA; high-voltage switching; vacuum microelectronics device; Anodes; Breakdown voltage; Microelectronics; Power semiconductor switches; Semiconductor device breakdown; Solid state circuits; Substrates; Switching circuits; Testing; Vacuum breakdown;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728683
