DocumentCode
2319094
Title
Fabrication of a novel polysilicon lateral field emission triode with a high current density and high-transconductance
Author
Park, Dong Il ; Lee, Jae-Hoon ; Hahm, Sung-Ho ; Lee, Jong-Hyum ; Lee, Jung-Hee
Author_Institution
Sch. of Electr. & Electron. Eng., Kyungpook Nat. Univ., Taegu, South Korea
fYear
1998
fDate
19-24 July 1998
Firstpage
148
Lastpage
149
Abstract
In this study, we report on a lateral polysilicon field emission triode array fabricated using a SOI structure (Si/sub 3/N/sub 4//SiO/sub 2//poly-Si/SiO/sub 2/) and a LOCOS (local oxidation of polysilicon) process. The triode fabrication procedure is similar to that of the lateral field emission diode array based on SOI (silicon on insulator) structure with either silicon or polysilicon electrode.
Keywords
electron field emission; elemental semiconductors; oxidation; silicon; silicon-on-insulator; triodes; vacuum microelectronics; LOCOS; SOI structure; Si/sub 3/N/sub 4/-SiO/sub 2/-Si-SiO/sub 2/; current density; fabrication; polysilicon lateral field emission triode array; transconductance; Anodes; Cathodes; Current density; Diodes; Electrodes; Etching; Fabrication; Field emitter arrays; Oxidation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728685
Filename
728685
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