DocumentCode
2319113
Title
Microwave amplification in structures with field and secondary emission
Author
Galdetskiy, A.
Author_Institution
SRI Istok, Fryazino, Russia
fYear
1998
fDate
19-24 July 1998
Firstpage
152
Lastpage
153
Abstract
A new design of microwave distributed amplifier is considered, in which rf voltage is applied to anode electrode, field effect cathode emits unmodulated electron flow, and wideband amplification can be achieved due to secondary emission modulation. As example amplifier design is considered having cut-off frequency 41 GHz, gain 3.3 dB/cm, efficiency 40%, pulse output power 56 W.
Keywords
distributed amplifiers; electron field emission; microwave amplifiers; microwave tubes; secondary electron emission; vacuum microelectronics; wideband amplifiers; 40 percent; 41 GHz; 56 W; FEA; field emission; microwave distributed amplifier; secondary emission; wideband amplification; Anodes; Broadband amplifiers; Cathodes; Distributed amplifiers; Electrodes; Electron emission; Power amplifiers; Pulse amplifiers; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728688
Filename
728688
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