Title :
Microwave amplification in structures with field and secondary emission
Author_Institution :
SRI Istok, Fryazino, Russia
Abstract :
A new design of microwave distributed amplifier is considered, in which rf voltage is applied to anode electrode, field effect cathode emits unmodulated electron flow, and wideband amplification can be achieved due to secondary emission modulation. As example amplifier design is considered having cut-off frequency 41 GHz, gain 3.3 dB/cm, efficiency 40%, pulse output power 56 W.
Keywords :
distributed amplifiers; electron field emission; microwave amplifiers; microwave tubes; secondary electron emission; vacuum microelectronics; wideband amplifiers; 40 percent; 41 GHz; 56 W; FEA; field emission; microwave distributed amplifier; secondary emission; wideband amplification; Anodes; Broadband amplifiers; Cathodes; Distributed amplifiers; Electrodes; Electron emission; Power amplifiers; Pulse amplifiers; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728688
