A laser direct write double-level-metal technology for rapid fabrication

Author

Fu, C. ; Law, B. ; Hsu, R. ; Raley, N. ; Malba, V. ; Hills, R. ; Lai, C.

Author_Institution

Lawrence Livermore Nat. Lab., California Univ., CA, USA

fYear

1990

fDate

13-16 May 1990

Abstract

An all-dry, double-level-metal technology for personalization of VLSI gate arrays is described. The goal is to provide rapid prototyping of new electronic systems, and to serve as the nucleus for a potential job-shop, low-volume manufacturing environment. The process development is examined for the demonstration of double-level-metal interconnect, with emphasis on novel technologies such as the laser direct write and single-wafer metal etching using the magnetron-enhanced reactive-ion-etching technique. A double-level-metal interconnect based on 100000 laser patterned 2-μm vias has been successfully demonstrated using this technology

Keywords

VLSI; integrated circuit technology; laser beam applications; logic arrays; metallisation; photolithography; sputter etching; 2 micron; Al-Si-Cu metallisation; DLM; RIE; double-level-metal interconnect; double-level-metal technology; dry etching; laser direct write; laser induced etching; low-volume manufacturing environment; magnetron-enhanced reactive-ion-etching technique; novel technologies; personalization of VLSI gate arrays; quick turnaround; rapid prototyping; single-wafer metal etching; Amorphous magnetic materials; Amorphous silicon; Argon; Etching; Integrated circuit interconnections; Optical device fabrication; Power lasers; Printing; Pump lasers; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990

Conference_Location

Boston, MA

Type

conf

DOI

10.1109/CICC.1990.124767

Filename

124767