A new self-aligned-gate-molding technique for the fabrication of gated diamond emitter

We have developed micro-patterned pyramidal diamond microtips on diamond film and have reported a gated diamond field emitter fabricated by a "conventional" self-aligning technique. In this paper, we report the development of a new self-align fabrication process "self-align-gate-molding" technique for the fabrication of an ultra sharp diamond field emitter with self-aligned anode achieving a sub-volt (0.7 V) turn on voltage and high and stable emission current. The new self-align fabrication technique is much simpler than the convention self-align technique. Moreover, the new fabrication method produces an ultra sharp diamond tip, which needs no further tip sharpening after tip formation. This improves the field enhancement factor of the diamond tips, thereby reducing the operating voltage and enhancing emission current compared to diamond tips fabricated by the conventional molding technique. This results in a more uniform self-align gated structure with a sharper diamond tip apex and a more economical fabrication process.