Title :
AlInAs/GaInAs HBT IC technology
Author :
Jensen, J.F. ; Stanchina, William E. ; Metzger, R.A. ; Rensch, D.B. ; Pierce, M.W. ; Kargodorian, T.V. ; Allen, Y.K.
Author_Institution :
Hughes Res. Lab., Malibu, CA
Abstract :
CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates are demonstrated. A cutoff frequency ( ft) and a maximum frequency of oscillation of 90 GHz and 70 GHz, respectively, have been achieved with a 2×5-μm2 emitter. The ring oscillators demonstrated a 15.8 ps gate delay. The divide-by-two and divide-by-four circuits operated at 22 GHz and 24.8 GHz, respectively
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; integrated logic circuits; oscillators; semiconductor device models; 15.8 ps; 2 micron; 22 to 90 GHz; AlInAs-GaInAs; CML; ECL; HBT IC technology; InP substrates; cutoff frequency; divide by two circuits; divide-by-four circuits; gate delay; heterojunction bipolar transistors; lattice matched; maximum frequency of oscillation; models; ring-oscillators; semiconductors; static frequency divider circuits; Circuits; Electrons; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Lattices; Photonic band gap; Substrates; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Conference_Location :
Boston, MA
DOI :
10.1109/CICC.1990.124768
