An addressable field emission array for e-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes

A novel addressable field emission array (AFEA) is being developed for use in a new deep sub-micron (/spl les/100 nm) electron-beam lithography system. The device consists of a two-dimensional array of miniature planar field emission cathodes consisting of a low electron affinity coating (e.g. amorphous diamond, a-D) deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of massively parallel but independent electron beams. Although the prototype devices presented here are controlled by external application-specific integrated circuits (ASICs), a low-temperature fabrication process is employed so future arrays may be placed directly on completed CMOS wafers.