MW/LW photoresponse in dual-band n-B-n InAs/GaSb superlattice

Author

Lee, S.J. ; Noh, S.K. ; Lee, K.S. ; Dawson, L.R. ; Krishna, S.

Author_Institution

GRL on Quantum Detector, Korea Res. Inst. of Stand. & Sci., Daejeon, South Korea

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

1

Abstract

The subband transitions in a dual-band n-B-n InAs/GaSb type-II superlattice detector are identified from the photoresponse (PR) spectra through a comparison with photoluminescence (PL) profiles. In the mid- and the long-wavelength (MW/LW) PR spectra achieved by changing the bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. Using a functional fit to the temperature-dependent MW-PR data, the Varshni´s parameters are found to be (alpha, beta) = (2.50times10^-4 eV/K, 78 K).

Keywords

III-V semiconductors; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; wide band gap semiconductors; InAs-GaSb; LW photoresponse; MW photoresponse; Varshni parameters; bias polarity; dual-band n-B-n type-II superlattice detector; hole subbands; long-wavelength spectra; mid-wavelength spectra; photoluminescence profiles; photoresponse spectra; subband transitions; temperature 78 K; Dual band; Infrared detectors; Infrared spectra; Laser sintering; Photodetectors; Photoluminescence; Superlattices; Surface fitting; Telecommunication standards; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324915

Filename

5324915