Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

This study explores the field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma CVD. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. With this configuration, nitrogen could be added as an impurity to the process gas with gas phase [N]/[C] ratios spanning from 0 to 80. Following deposition, the micro-Raman and photoluminescence (PL) spectra were recorded using the 514.5 nm line of an argon ion laser as the excitation source. The sample surfaces were also examined using SEM and optical microscopy. Field emission measurements were obtained in UHV with a position-variable anode system. With this arrangement current voltage measurements are possible at numerous cathode to anode spacings.