Effects of nitrogen addition on the structure and field emission properties of amorphous carbon

Author

Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo

Author_Institution

Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

204

Lastpage

205

Abstract

The films of amorphous carbon with different amount of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH/sub 4/, Ar, and N/sub 2/ gas mixture. As the increase of nitrogen in the films, the optical band gap and sp/sup 3/ bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.

Keywords

amorphous state; bonds (chemical); carbon; electron field emission; energy gap; nitrogen; noncrystalline structure; plasma CVD coatings; C:N; amorphous carbon film; bonding; donor; field emission; helical resonator plasma enhanced chemical vapor deposition; nitrogen doping; optical band gap; structure; Amorphous materials; Argon; Carbon dioxide; Chemical vapor deposition; Nitrogen; Optical films; Optical resonators; Photonic band gap; Plasma chemistry; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728720

Filename

728720