A numerical approach to field electron emission from a wide-gap thin film

A wide-gap thin film cathode is drafted primarily which is considered to be of high quality and of nm scale. With an anode voltage the thin film an a substrate as the cathode has a double-triangle barrier, so that the electron emission process is similar to the tunneling in a double-barrier diode. According to the quantum theory, the tunneling electrons possessing different energy take different tunneling coefficients through the barrier set. From that the emission I-V characteristics can be integrated correctly. Because the electron distribution at the interface is uncertain, the result here presents the numerical meaning.