DocumentCode :
2319851
Title :
Field emission mapping of low-temperature diamond and DLC films
Author :
Kim, U. ; Aslam, D.M. ; Veerasamy, V.S.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
216
Lastpage :
217
Abstract :
The emission current densities in the ranges of 0.1-1.1 mA cm/sup -2/ for the flat anode and 5-10 A cm/sup -2/ for the pointed tungsten anode is measured from undoped poly-diamond deposited at 450-600 C. These values, which are non-uniform, are several orders of magnitude higher than the emission current from undoped or nitrogen-doped diamond-like carbon (DLC) films.
Keywords :
carbon; diamond; electron field emission; plasma CVD coatings; 450 to 600 C; C; DLC film; W; current density; field emission; flat anode; low-temperature deposition; pointed anode; polycrystalline diamond film; Anodes; Current density; Current measurement; Density measurement; Electron emission; Grain size; Optical films; Radio frequency; Semiconductor films; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728726
Filename :
728726
Link To Document :
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