DocumentCode
2319871
Title
Field emission characteristics of diamond films grown on glass substrates
Author
Lee, S.W. ; Han, I.T. ; Lee, N. ; Choi, W.B. ; Kim, J.M. ; Jeon, D.
Author_Institution
Dept. of Phys., Myong Ji Univ., Seoul, South Korea
fYear
1998
fDate
19-24 July 1998
Firstpage
218
Lastpage
219
Abstract
Using microwave plasma-enhanced chemical vapor deposition, diamond films were grown on Ti-coated glass substrates at low temperatures around 500/spl deg/C on behalf of the practical application for field emitters. Electron emission was observed at a turn-on field as low as 11 V//spl mu/m. Field emission characteristics were discussed in terms of crystalline qualities, surface morphologies, and electrical properties of diamond films.
Keywords
diamond; electron field emission; plasma CVD coatings; 500 C; C; Ti-coated glass substrate; diamond film; field emission; microwave plasma-enhanced chemical vapor deposition; Chemical vapor deposition; Current density; Electron emission; Glass; Plasma chemistry; Plasma displays; Plasma properties; Plasma temperature; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728727
Filename
728727
Link To Document