STM study electron field emission from Mo-doped AlN films

AlN films were grown by reactive RF magnetron sputtering of Al in Ar+N/sub 2/ gas mixture. Strongly textured along <001> (crystallites misorientation of 0.5-3/spl deg/) AlN films with thickness up to 0.5 micron were grown on single crystalline Si substrates. The films grown contained both crystalline and amorphous phases. AlN films were grown on the substrates which were fixed relative to the sputtered Al target. Taget contained Mo for doping of AlN films. Epitaxy reveals for AlN films growing on single crystal substrates only at temperatures exceeding 300/spl deg/C. We use scanning tunneling microscope (STM) Nanoscope I (Digital Instruments Inc.) modified for spectroscopy and electron field emission measurements.