DocumentCode
2319977
Title
A study of instability in the field electron emission from amorphous diamond films
Author
Chen, J. ; Deng, S.Z. ; Zhen, X.G. ; Xu, N.S.
Author_Institution
Dept. of Phys., Zhongshan Univ., Guangzhou, China
fYear
1998
fDate
19-24 July 1998
Firstpage
230
Lastpage
231
Abstract
Details are given of an experimental study of the I-V characteristics and instability of the field electron emission from amorphous diamond films prepared using magnetic field-filtered ion deposition technique. A switch-on phenomenon is observed, and two types of instability are found, i.e. fluctuation at low current and abrupt change in emission associated with local breakdown events at high current. Finally, it is found that, in order to establish a stable emission with current density approaching 50 mA/m/sup 2/, it is necessary to undergo the switch-on and local breakdown process. These phenomena are characterized and the physical mechanisms responsible for them are proposed.
Keywords
amorphous semiconductors; diamond; electron field emission; elemental semiconductors; semiconductor thin films; C; I-V characteristics; amorphous diamond films; current density; field electron emission instability; local breakdown events; local breakdown process; magnetic field-filtered ion deposition technique; switch-on; switch-on phenomenon; Amorphous materials; Current density; Electric breakdown; Electron emission; Flat panel displays; Fluctuations; Magnetic field measurement; Magnetic fields; Magnetic films; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728733
Filename
728733
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